POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/11/18 REVISED DATE :
GSS9510
N AND P-CHANNEL ENHANCEMENT...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/18 REVISED DATE :
GSS9510
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
The GSS9510 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low On-resistance *Fast Switching Performance
Description
N-CH BVDSS 30V N-CH RDS(ON) 28m N-CH ID 6.9A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.3A
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings
N-channel P-channel
Unit V V A A A W W/
30 ±20 6.9 5.5 30 2.0 0.016
-30 ±20 -5.3 -4.2 -30
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
-55 ~ +150
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-a
Value 62.5
Unit /W
GSS9510
Page: 1/7
ISSUED DATE :2005/11/18 REVISED DATE :
N-Channel Electrical Characteristics (Tj = 25
Parameter Drai...
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