www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/04/06 REVISED DATE :
GSS9922E
N-CHANNEL ENHANCEMENT MODE...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/04/06 REVISED DATE :
GSS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 20m 6.8A
The GSS9922E provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC/DC battery application
Description
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ,
[email protected] Continuous Drain Current ,
[email protected] Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @Ta=25 ID @Ta=70 IDM PD @Ta=25 Tj, Tstg
Ratings 20 ±12 6.8 5.4 25 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-a
Value 62.5
Unit /W
GSS9922E
Page: 1/4
ISSUED DATE :2006/04/06 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 20 0.5 Typ. 0.05 22 25 3 9 11 12 47 23 1730 280 240 2.2 Max. 1.2 ±10 10 100 20 25 40 2770 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=25...