POWER MOSFET
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/16 REVISED DATE :
GSS9975
N-CHANNEL ENHANCEMENT MODE ...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/11/16 REVISED DATE :
GSS9975
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 21m 7.6A
The GSS9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Description
Features
*High Breakdown Voltage *Low On-resistance *RoHS Compliant
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 60 ±25 7.6 6.1 30 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-amb
Value 62.5
Unit /W
GSS9975
Page: 1/4
ISSUED DATE :2005/11/16 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 60 1.0 Typ. 0.06 12 26 6 14 14 7 40 13 2320 200 170 0.86 Max. 3.0 ±100 1 25 21 27 40 3700 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1...
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