GSS9975

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/11/16 REVISED DATE : GSS9975 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 21m 7.6A The GSS9975 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. Description Features *High Breakdown Voltage *Low On-resistance *RoHS Compliant Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 60 ±25 7.6 6.1 30 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 62.5 Unit /W GSS9975 Page: 1/4 ISSUED DATE :2005/11/16 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 60 1.0 Typ. 0.06 12 26 6 14 14 7 40 13 2320 200 170 0.86 Max. 3.0 ±100 1 25 21 27 40 3700 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1...