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GT2603 Datasheet, Equivalent, POWER MOSFET.P-CHANNEL ENHANCEMENT MODE POWER MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Part | GT2603 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/04/26 REVISED DA TE : GT2603 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 6 5m -5. 0A The GT2603 utilized advanced processing techniques to achieve the lo west possible on-resistance, extremely efficient and cost-effectiveness device . The GT2603 is universally used for al l commercial-industrial applications. Description Features *Simple Drive Re quirement *Small Package Outline Packa ge Dimensions REF. A B C D E F Millim eter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max . 3. 10 3. 00 1. 80 0. 55 0. 10 10° REF. G H I J K L Dime . |
| Manufacture | GTM |
| Datasheet |
| Part | GT2603 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/04/26 REVISED DA TE : GT2603 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 6 5m -5. 0A The GT2603 utilized advanced processing techniques to achieve the lo west possible on-resistance, extremely efficient and cost-effectiveness device . The GT2603 is universally used for al l commercial-industrial applications. Description Features *Simple Drive Re quirement *Small Package Outline Packa ge Dimensions REF. A B C D E F Millim eter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max . 3. 10 3. 00 1. 80 0. 55 0. 10 10° REF. G H I J K L Dime . |
| Manufacture | GTM |
| Datasheet |
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