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GT2605 Datasheet, Equivalent, POWER MOSFET.P-CHANNEL ENHANCEMENT MODE POWER MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Part | GT2605 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/05/18 REVISED DA TE : GT2605 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 8 0m -4. 0A The GT2605 utilized advanced processing techniques to achieve the lo west possible on-resistance, extremely efficient and cost-effectiveness device . The GT2605 is universally used for al l commercial-industrial applications. Description *Fast Switching Characteri stic *Lower Gate Charge *Small Footprin t & Low Profile Package Features Pack age Dimensions REF. A B C D E F Milli meter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Ma x. 3. 10 3. 00 1. . |
| Manufacture | GTM |
| Datasheet |
| Part | GT2605 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/05/18 REVISED DA TE : GT2605 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 8 0m -4. 0A The GT2605 utilized advanced processing techniques to achieve the lo west possible on-resistance, extremely efficient and cost-effectiveness device . The GT2605 is universally used for al l commercial-industrial applications. Description *Fast Switching Characteri stic *Lower Gate Charge *Small Footprin t & Low Profile Package Features Pack age Dimensions REF. A B C D E F Milli meter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Ma x. 3. 10 3. 00 1. . |
| Manufacture | GTM |
| Datasheet |
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