GT2622

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/16 REVISED DATE : GT2622 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 1.8 520mA The GT2622 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applications. Description *Low Gate Charge *Surface Mount package *RoHS Compliant Features Package Dimensions REF. A B C D E F Millimeter Min. 2.70 2.60 1.40 0.30 0 0° Max. 3.10 3.00 1.80 0.55 0.10 10° REF. G H I J K L Dimensions Millimeter 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 50 ±20 520 410 1.5 0.8 0.006 -55 ~ +150 Value 150 Unit V V mA mA A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 ISSUED DATE :2006/01/16 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 50 1.0 Typ. 0.06 600 1 0.5 0.5 12 10 56 29 32 8 6 Max. 3.0 30 10 100 1.8 3.2 1.6 50 pF ns nC Unit V V/ V mS uA ...