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GT2622 Datasheet, Equivalent, POWER MOSFET.N-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Part | GT2622 |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2006/01/16 REVISED DA TE : GT2622 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 1. 8 520mA The GT2622 utilized advanced p rocessing techniques to achieve the low est possible on-resistance, extremely e fficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applicat ions. Description *Low Gate Charge *S urface Mount package *RoHS Compliant F eatures Package Dimensions REF. A B C D E F Millimeter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max. 3. 10 3. 00 1. 80 0. 55 0. 1 0 10° REF. G H . |
| Manufacture | GTM |
| Datasheet |
| Part | GT2622 |
|---|---|
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2006/01/16 REVISED DA TE : GT2622 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 1. 8 520mA The GT2622 utilized advanced p rocessing techniques to achieve the low est possible on-resistance, extremely e fficient and cost-effectiveness device. The SOT-26 package is universally used for all commercial-industrial applicat ions. Description *Low Gate Charge *S urface Mount package *RoHS Compliant F eatures Package Dimensions REF. A B C D E F Millimeter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max. 3. 10 3. 00 1. 80 0. 55 0. 1 0 10° REF. G H . |
| Manufacture | GTM |
| Datasheet |
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