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GT2623 Datasheet, Equivalent, POWER MOSFET.P-CHANNEL ENHANCEMENT MODE POWER MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Part | GT2623 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/05/06 REVISED DA TE : GT2623 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 1 70m -2. 0A The GT2623 utilized advanced processing techniques to achieve the l owest possible on-resistance, extremely efficient and cost-effectiveness devic e. The GT2623 is universally used for a ll commercial-industrial applications. Description *Low Gate Charge *Low On- resistance Features Package Dimension s REF. A B C D E F Millimeter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max. 3. 10 3. 00 1. 80 0. 55 0. 10 10° REF. G H I J K L Dimensions Milli . |
| Manufacture | GTM |
| Datasheet |
| Part | GT2623 |
|---|---|
| Description | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Feature | www. DataSheet4U. com Pb Free Plating Pro duct ISSUED DATE :2005/05/06 REVISED DA TE : GT2623 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 1 70m -2. 0A The GT2623 utilized advanced processing techniques to achieve the l owest possible on-resistance, extremely efficient and cost-effectiveness devic e. The GT2623 is universally used for a ll commercial-industrial applications. Description *Low Gate Charge *Low On- resistance Features Package Dimension s REF. A B C D E F Millimeter Min. 2. 70 2. 60 1. 40 0. 30 0 0° Max. 3. 10 3. 00 1. 80 0. 55 0. 10 10° REF. G H I J K L Dimensions Milli . |
| Manufacture | GTM |
| Datasheet |
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