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HIT647 Dataheets PDF



Part Number HIT647
Manufacturers Renesas Technology
Logo Renesas Technology
Description Silicon PNP Epitaxial
Datasheet HIT647 DatasheetHIT647 Datasheet (PDF)

www.DataSheet4U.com HIT647 Silicon PNP Epitaxial REJ03G1504-0200 Rev.2.00 Mar 05, 2007 Features • Low frequency power amplifier • Complementary pair with HIT667 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperat.

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www.DataSheet4U.com HIT647 Silicon PNP Epitaxial REJ03G1504-0200 Rev.2.00 Mar 05, 2007 Features • Low frequency power amplifier • Complementary pair with HIT667 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note : 1. PW ≤ 10 ms, Duty cycle ≤ 20% Symbol VCBO VCEO VEBO IC IC (peak) *1 PC Tj Tstg Ratings -120 -100 -6 -1.0 -2.0 0.9 150 –55 to +150 Unit V V V A A W °C °C Rev.2.00 Mar 05, 2007 page 1 of 4 HIT647 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) Min -120 -100 -6 — — 140 40 — — Typ — — — — — — — — — Max — — — -500 -500 350 — -0.5 -1.1 Unit V V V nA nA — — V V Test conditions IC = -100 µA, IE = 0 IC = -10 mA, RBE = ∞ IE = -100 µA, IC = 0 VCB = -120 V, IE = 0 VEB = -6 V, IC = 0 VCE = -2 V, IC = -150 mA VCE = -5 V, IC = -1 A IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA Rev.2.00 Mar 05, 2007 page 2 of 4 HIT647 Main Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation Pc (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 -1.0 Typical Output Characteristics -30 mA -20 mA -10 mA -5 mA -0.8 Collector Current IC (mA) -0.6 -0.4 P -40 mA -60 mA -80 mA -100 mA = 0. 9 -2 mA C W -1 mA -0.5 mA IB = 0 -0.2 0 50 100 150 0 0 -2 -4 -6 -8 -10 Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V) Typical Transfer Characteristics -500 600 VCE = -5 V Pulse DC Current Transfer Ratio vs. Collector Current DC Current Transfer Ratio hFE VCE = -5 V Pulse Collector Current IC (mA) -200 -100 -50 -20 -10 -5 -2 -1 0 Ta = 75°C 25°C -25°C 500 400 300 Ta = 75°C 200 100 0 25°C -25°C -0.2 -0.4 -0.6 -0.8 -1.0 -1 -3 -10 -30 -100 -300 -1000 Base to Emitter Voltage VBE (V) Collector Current IC (mA) -1.0 IC = 10 IB Pulse -0.8 VBE(sat) -25°C 25°C Ta = 75°C Ta = 75°C 25°C -25°C VCE(sat) -0.20 -0.16 -0.6 -0.12 -0.4 -0.08 -0.2 0 -1 -0.04 0 -1000 -10 -100 Collector Current IC (mA) Rev.2.00 Mar 05, 2007 page 3 of 4 Collector to Emitter Saturation Voltage VCE(sat) (V) Base to Emitter & Collector to Emitter Saturation Voltage vs. Collector Current Base to Emitter Saturation Voltage VBE(sat) (V) HIT647 Package Dimensions JEITA Package Code SC-51 RENESAS Code PRSS0003DC-A Package Name TO-92 Mod / TO-92 ModV MASS[Typ.] 0.35g Unit: mm 4.8 ± 0.4 3.8 ± 0.4 0.65 ± 0.1 0.75 Max 0.55 Max 0.60 Max 2.3 Max 0.7 10.1 Min 8.0 ± 0.5 0.5 Max 1.27 2.54 Ordering Information Part Name Quantity Shipping Container HIT647-EQ 2500 pcs Bulk, Vinyl Bag HIT647TZ-EQ 2500 pcs Hold Box, Radial Taping Note: This product is designed for consumer use and not for automotive. Rev.2.00 Mar 05, 2007 page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property rights or any other rights of Renesas or any third party with respect to the information in this document. 2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including, but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples. 3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document, please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas such as that disclose.


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