OPE5587

www.DataSheet4U.com High Speed GaAlAs Infrared Emitter C C The OPE5587 is GaAlAs infrared emitting diode that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 package and has narrow beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. FEATURES Ultra high-speed : 25ns rise time 880nm wavelength Narrow beam angle Low forward voltage High power and high reliability Available for pulse operating APPLICATIONS Emitter of IrDA IR Audio and Telephone High speed IR communication IR LANs Available for wireless digital data transmission OPE5587 DIMENSIONS (Unit : mm) 5.0 1.3 Max 2.0 Min 5.7 8.7 24.0 Min 7.7 2- 0.5 2.5 Anode Cathode Tolerance : ±0.2mm STORAGE Condition : 5°C~35°C,R.H.60% Terms : within 3 months from production date Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGSC C C CCCCCCCCCCCCCCCCC(Ta=25°C ) Item Symbol Rating Unit Power Dissipation PDC 150 C Forward current IFC 100 EC IFPC 1.0 AC Pulse forward current CCCCCʭ1...