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RKR0703BKH

Renesas Technology

Silicon Schottky Barrier Diode

www.DataSheet4U.com RKR0703BKH Silicon Schottky Barrier Diode for Rectifying REJ03G1495-0100 Rev.1.00 Jan 09, 2007 Fea...


Renesas Technology

RKR0703BKH

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www.DataSheet4U.com RKR0703BKH Silicon Schottky Barrier Diode for Rectifying REJ03G1495-0100 Rev.1.00 Jan 09, 2007 Features Low reverse current and suitable for high efficiency rectifying. Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. RKR0703BKH Laser Mark S5 Package Name TURP Package Code PUSF0002ZC-A Pin Arrangement Cathode mark Mark 1 S5 2 1. Cathode 2. Anode Rev.1.00 Jan 09, 2007 page 1 of 5 RKR0703BKH Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 1 2 IO * * IFSM * Tj 3 Value 30 30 0.7 3 150 Unit V V A A °C °C Storage temperature Tstg −55 to +150 Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 30°C, With Glass epoxy board (board size: 50mm × 50 mm, Land size 6mm × 6 mm) Short form wave (θ180°C), VR = 15 V. 3. 10 ms sine wave 1 pulse. Electrical Characteristics (Ta = 25°C) Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min     Typ      100 200 Max 0.37 0.55 10 50 20   V µA pF °C/W Unit Test Condition IF = 100 mA IF = 700 mA VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz 1 Ceramics board * Glass epoxy board * 2    Notes: 1. Ceramics board 2.0 0.5 2.0 0.3 2.0 50h×50w×0.8t Unit: mm 1.0 2. Glass epoxy board 6.0 0.5 6.0 0.3 2.0 50h×50w×0.8t Unit...




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