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RKR0703BKH
Silicon Schottky Barrier Diode for Rectifying
REJ03G1495-0100 Rev.1.00 Jan 09, 2007
Fea...
www.DataSheet4U.com
RKR0703BKH
Silicon
Schottky Barrier Diode for Rectifying
REJ03G1495-0100 Rev.1.00 Jan 09, 2007
Features
Low reverse current and suitable for high efficiency rectifying. Thin Ultra small Resin Package (TURP) is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. RKR0703BKH Laser Mark S5 Package Name TURP Package Code PUSF0002ZC-A
Pin Arrangement
Cathode mark Mark 1
S5
2 1. Cathode 2. Anode
Rev.1.00 Jan 09, 2007 page 1 of 5
RKR0703BKH
Absolute Maximum Ratings
(Ta = 25°C)
Item Repetitive peak reverse voltage Reverse voltage Average rectified current Non-Repetitive peak forward surge current Junction temperature Symbol VRRM VR 1 2 IO * * IFSM * Tj
3
Value 30 30 0.7 3 150
Unit V V A A °C °C
Storage temperature Tstg −55 to +150 Notes: 1. See from Fig.6 with Glass epoxy board. 2. Ta = 30°C, With Glass epoxy board (board size: 50mm × 50 mm, Land size 6mm × 6 mm) Short form wave (θ180°C), VR = 15 V. 3. 10 ms sine wave 1 pulse.
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Reverse current Capacitance Thermal resistance Symbol VF1 VF2 IR1 IR2 C Rth(j-a) Min Typ 100 200 Max 0.37 0.55 10 50 20 V µA pF °C/W Unit Test Condition IF = 100 mA IF = 700 mA VR = 5 V VR = 30 V VR = 10 V, f = 1 MHz 1 Ceramics board * Glass epoxy board *
2
Notes: 1. Ceramics board
2.0
0.5
2.0 0.3 2.0
50h×50w×0.8t
Unit: mm
1.0
2. Glass epoxy board
6.0
0.5
6.0 0.3 2.0
50h×50w×0.8t
Unit...