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RKD750KP
Silicon Schottky Barrier Diode for Detector
REJ03G1460-0200 Rev.2.00 Feb 22, 2007
Feature...
www.DataSheet4U.com
RKD750KP
Silicon
Schottky Barrier Diode for Detector
REJ03G1460-0200 Rev.2.00 Feb 22, 2007
Features
Low forward voltage, Low capacitance and High detection sensitivity. Halogen free, Environmental friendly Package include Conformity to RoHS Directive. Ultra small Package (0.6mm×0.3mm Size leadless type).
Ordering Information
Part No. RKD750KP Laser Mark A Package Name MP6 Package Code PXSN0002ZB-A
Pin Arrangement
Cathode mark Mark
A
1
2 1. Cathode 2. Anode
Rev.2.00 Feb 22, 2007 page 1 of 4
RKD750KP
Absolute Maximum Ratings
(Ta = 25°C)
Item Reverse voltage Average rectified current Junction temperature Storage temperature Symbol VR IO Tj Tstg Value 2 5 125 –55 to +125 Unit V mA °C °C
Electrical Characteristics
(Ta = 25°C)
Item Forward voltage Capacitance 1 ESD-Capability * Symbol VF1 VF2 C — Min — — — 10 Typ — — 0.3 — Max 0.15 0.27 — — Unit V pF V Test Condition IF = 0.1 mA IF = 1 mA VR = 0.5 V, f = 1 MHz C = 200 pF, RL = 0 Ω, Both forward and reverse direction 1 pulse.
Notes: 1. Failure criterion ; IR ≥ 100 µA at VR = 0.5 V 2. Please do not use the soldering iron due to avoid high stress to the MP6 package.
Rev.2.00 Feb 22, 2007 page 2 of 4
RKD750KP
Main Characteristic
10–2 10–2
Reverse current IR (A)
Forward current IF (A)
10–3
10–3
Ta = 75°C
10–4
10–4
Ta = 25°C
10–5
10–5
10–6
0
0.1
0.2
0.3
0.4
0.5
10–6
0
1
2
3
4
5
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Rev...