| DatasheetsPDF.com |
RQK0604IGDQA Datasheet, Equivalent, N-Channel MOSFET.Silicon N-Channel MOSFET Silicon N-Channel MOSFET |
| Part | RQK0604IGDQA |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | RQK0604IGDQA
Silicon N Channel MOS FET P ower Switching
Features
• Low on-resi stance RDS(on) = 111 mΩ typ. (at VGS = 4. 5 V, ID = 1 A) • Low drive current • High speed switching • VDSS ≥ 6 0 V and capable of 2. 5 V gate drive Out line RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marki ng is “IG“. Preliminary Datasheet R07DS0308EJ0300 Rev. 3. 00 Jan 10, 2014 3 D 2 G S 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbo l Drain to source voltage Gate to sour ce voltage Drain current Drain peak cur rent Body - drain diode reverse drain c urrent Channel dissipation V . |
| Manufacture | Renesas Technology |
| Datasheet |
| Part | RQK0604IGDQA |
|---|---|
| Description | Silicon N-Channel MOSFET |
| Feature | RQK0604IGDQA
Silicon N Channel MOS FET P ower Switching
Features
• Low on-resi stance RDS(on) = 111 mΩ typ. (at VGS = 4. 5 V, ID = 1 A) • Low drive current • High speed switching • VDSS ≥ 6 0 V and capable of 2. 5 V gate drive Out line RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marki ng is “IG“. Preliminary Datasheet R07DS0308EJ0300 Rev. 3. 00 Jan 10, 2014 3 D 2 G S 1 1. Source 2. Gate 3. Drain Absolute Maximum Ratings Item Symbo l Drain to source voltage Gate to sour ce voltage Drain current Drain peak cur rent Body - drain diode reverse drain c urrent Channel dissipation V . |
| Manufacture | Renesas Technology |
| Datasheet |
| @ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact) |