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RQM2201DNS Datasheet, Equivalent, Power Switching.Silicon N Channel MOS FET Power Switching Silicon N Channel MOS FET Power Switching |
| Part | RQM2201DNS |
|---|---|
| Description | Silicon N Channel MOS FET Power Switching |
| Feature | www. DataSheet4U. com RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03 G1492-0200 Rev. 2. 00 Apr 16, 2007 Featu res • • • • • Small, thin and leadless type package (3 × 3 mm, t = 0. 8 mm max. ) Two FET chips are mounted in one package High density mounting Hi gh speed switching. (Ciss = 200 pF typ) VDSS ≥ 60 V and capable of 2. 5 V gat e drive Outline RENESAS Package code: PWSN0006ZA-A (Package name: WSON0303-6 1 (Nch) 6 D FET No. 2 (Nch) 5 D 4 G 5 6 2 G 1 4 4 3 2 1 (Bottom view) S 1 S 3 1, 3: Source 2, 4: Gate 5, 6: Drain Notes: 1. Mark ing is “M2201“. 2. The foll . |
| Manufacture | Renesas Technology |
| Datasheet |
| Part | RQM2201DNS |
|---|---|
| Description | Silicon N Channel MOS FET Power Switching |
| Feature | www. DataSheet4U. com RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03 G1492-0200 Rev. 2. 00 Apr 16, 2007 Featu res • • • • • Small, thin and leadless type package (3 × 3 mm, t = 0. 8 mm max. ) Two FET chips are mounted in one package High density mounting Hi gh speed switching. (Ciss = 200 pF typ) VDSS ≥ 60 V and capable of 2. 5 V gat e drive Outline RENESAS Package code: PWSN0006ZA-A (Package name: WSON0303-6 1 (Nch) 6 D FET No. 2 (Nch) 5 D 4 G 5 6 2 G 1 4 4 3 2 1 (Bottom view) S 1 S 3 1, 3: Source 2, 4: Gate 5, 6: Drain Notes: 1. Mark ing is “M2201“. 2. The foll . |
| Manufacture | Renesas Technology |
| Datasheet |
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