RQM2201DNS

www.DataSheet4U.com RQM2201DNS Silicon N Channel MOS FET Power Switching REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Features Small, thin and leadless type package (3 × 3 mm, t = 0.8 mm max.) Two FET chips are mounted in one package High density mounting High speed switching. (Ciss = 200 pF typ) VDSS ≥ 60 V and capable of 2.5 V gate drive Outline RENESAS Package code: PWSN0006ZA-A (Package name: WSON0303-6 ) FET No.1 (Nch) 6 D FET No.2 (Nch) 5 D 4 G 5 6 2 G 1 4 4 3 2 1 (Bottom view) S 1 S 3 1, 3: Source 2, 4: Gate 5, 6: Drain Notes: 1. Marking is “M2201“. 2. The following maximum ratings and electric characteristics are applied to both FET1 and FET2. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Pch Note3 Tch Tstg Ratings 60 ±12 2 8 2 1 1.5 150 –55 to +150 Unit V V A A A W W °C °C Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. 1 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm) 3. 2 Drive operation: When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1492-0200 Rev.2.00 Apr 16, 2007 Page 1 of 7 RQM2201DNS Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Gate...