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GP1S97J0000F
GP1S97J0000F
Gap : 2.2mm, Slit : 0.3mm Phototransistor Output, Compact Transmissive Photointerrupter
■ Description
GP1S97J0000F is a compact-package, phototransistor output, transmissive photointerrupter, with opposing emitter and detector in a molding that provides noncontact sensing. The compact package series is a result of unique technology combing transfer and injection molding. This device has hole that passes through the base of the device, for assembly or fixing, and it has a wide gap.
■ Agency approvals/Compliance
1. Compliant with RoHS directive
■ Applications
1. Detection of object presence or motion. 2. Example : printer, lens control for camera
■ Features
1. Transmissive with phototransistor output 2. Highlights : • Compact Size • Wide Gap 3. Key Parameters : • Gap Width : 2.2mm • Slit Width (detector side): 0.3mm • Package : 5×3.4×5.2mm 4. Lead free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
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Sheet No.: D3-A01101EN Date Jun. 30. 2005 © SHARP Corporation
GP1S97J0000F
■ Internal Connection Diagram
Top view
2 1 1 2 3 4 3 4
Anode Collector Emitter Cathode
■ Outline Dimensions
Top view aʻ
(Unit : mm)
a
(1)
5 1.4 2.2
a-aʻ section (C0.4) SHARP mark "S" Light path center (C0.3)
+0.2 0.15− 0.1
3.4
(0.3) Slit width Date code 3.9
0.1 φ1.5+ −0 hole
2.8
3.6±0.5
5.2
0.4 ∗2.54
∗3.65
3
4
2
1
• Unspecified tolerance : ±0.2mm • ( ) : Reference dimensions • The dimensions indicated by ∗ refer to those measured from the lead base. • The dimensions shown do not include those of burrs. Burr's dimentions : 0.15mm MAX.
Product mass : approx. 0.11g Plating material : SnCu (Cu : TYP. 2%)
Sheet No.: D3-A01101EN
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GP1S97J0000F
Date code (2 digit)
1st digit Year of production A.D. Mark 2000 0 2001 1 2002 2 2003 3 2004 4 2005 5 2006 6 2007 7 2008 8 2009 9 2010 0 : : 2nd digit Month of production Month Mark 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 9 9 10 X 11 Y 12 Z
repeats in a 10 year cycle
Rank mark
There is no rank indicator.
Country of origin
Japan
Sheet No.: D3-A01101EN
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GP1S97J0000F
■ Absolute Maximum Ratings
Parameter Forward current Input Reverse voltage Power dissipation Collector-emitter voltage Emitter-collector voltage Output Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature ∗1 Soldering temperature
∗
Symbol Rating IF 50 VR 6 P 75 VCEO 35 VECO 6 20 IC 75 PC 100 Ptot Topr −25 to +85 Tstg −40 to +100 Tsol 260
(Ta=25˚C) Unit mA V mW V V mA mW mW ˚C ˚C ˚C
1mmMIN. Soldering area
1 For 5s or less
■ Electro-optical Characteristics
Parameter Forward voltage Input Reverse current Output Collector dark current Collector current Transfer Collector-emitter saturation voltage characRise time teristics Response time Fall time Symbol VF IR ICEO IC VCE(sat) tr tf Condition IF=20mA VR=3V VCE=20V VCE=5V, IF=5mA IF=10mA, IC=40μA VCE=5V, IC=100μA, RL=1kΩ MIN. − − − 80 − − − TYP. 1.2 − − − − 50 50
(Ta=25˚C) MAX. Unit 1.4 V 10 μA 100 nA 400 μA 0.4 V 150 μs 150 μs
Sheet No.: D3-A01101EN
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GP1S97J0000F
Fig.1 Forward Current vs. Ambient Temperature
60 50 Forward current IF (mA) 40 30 20 10 0 25
Fig.2 Power Dissipation vs. Ambient Temperature
120 100 80 75 60 40 20 15 0 −25 0 25 50 75 85 100 Ptot
Power dissipation P, Pc, Ptot (mW)
P, Pc
0
25
50
75 85
100
Ambient temperature Ta (oC)
Ambient temperature Ta (°C)
Fig.3 Forward Current vs. Forward Voltage
Fig.4 Collector Current vs. Forward Current
2.2 2 1.8 Collector current IC (mA) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 VCE=5V Ta=25°C
Ta75oC 50oC Forward current IF (mA) 100
25oC 0oC 25oC
10
1 0 0.5 1 1.5 2 2.5 3 Forward voltage VF (V)
0 0 2 4 6 8 10 12 14 16 18 20 Forward current IF (mA)
Fig.5 Collector Current vs. Collector-emitter Voltage
4.4 4 3.6 Ta=25°C
Fig.6 Relative Collector Current vs. Ambient Temperature
120 110 100 Relative collector current (%) 90 80 70 60 50 40 30 20 10 0 25 IF5mA VCE5V IC at Ta25oC 0 25 50 75 Ambient temperature Ta (oC)
Sheet No.: D3-A01101EN
Collector current IC (mA)
3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 1 2 3 4 5 6 7 8 9 10 Collector-emitter voltage VCE (V) IF=5mA IF=20mA IF=10mA IF=30mA IF=50mA IF=40mA
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GP1S97J0000F
Fig.7 Collector-emitter Saturation Voltage vs. Ambient Temperature
0.2 Collector-emitter saturation voltage VCE(sat) (V) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 −25 0 25 50 75 IF=10mA IC=40μA
Fig.8 Collector Dark Current vs. Ambient Temperature
10 6 VCE20V Collector dark current ICEO (A)
10 7
10 8
10 9
10 10 0 25 50 75 100 Ambient temperature Ta (oC)
Ambient temperature Ta (°C)
Fig.9 Response Time vs. Load Resistance
1 000 VC.