(HER101G - HER108G) 1.0A GLASS PASSIVATED ULTRAFAST DIODE
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WTE
POWER SEMICONDUCTORS
HER101G – HER108G
Pb
1.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
! !...
Description
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WTE
POWER SEMICONDUCTORS
HER101G – HER108G
Pb
1.0A GLASS PASSIVATED ULTRAFAST DIODE
Features
! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A
Mechanical Data
! ! ! ! ! ! ! Case: DO-41, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.34 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 D
DO-41 Dim Min Max 25.4 — A 4.06 5.21 B 0.71 0.864 C 2.00 2.72 D All Dimensions in mm
C
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. HER 101G 50 35 HER 102G 100 70
@TA=25°C unless otherwise specified
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Peak Reverse Current At Rated DC Blocking Voltage Reverse Recovery Time (Note 2) Typical Junction Capacitance (Note 3) Operating Temperature Range Storage Temperature Range @IF = 1.0A @TA = 25°C @TA = 100°C
Symbol VRRM VRWM VR VR(RMS) IO
HER 103G 200 140
HER 104G 300 210
HER 105G 400 280
HER 106G 600 420
HER 107G 800 5...
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