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IRF240 Datasheet, Equivalent, dv/dt RATED.REPETITIVE AVALANCHE AND dv/dt RATED REPETITIVE AVALANCHE AND dv/dt RATED |
| Part | IRF240 |
|---|---|
| Description | REPETITIVE AVALANCHE AND dv/dt RATED |
| Feature | www. DataSheet4U. com PD - 90370 REPETIT IVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Pr oduct Summary Part Number IRF240 BVDSS 200V RDS(on) 0. 18Ω ID 18A IRF24 0 200V, N-CHANNEL The HEXFETtechnol ogy is the key to International Rectifi er’s advanced line of power MOSFET tr ansistors. The efficient geometry and u nique processing of this latest “Stat e of the Art” design achieves: very l ow on-state resistance combined with hi gh transconductance; superior reverse e nergy and diode recovery dv/dt capabili ty. The HEXFET transistors also feature all of the well establish . |
| Manufacture | International Rectifier |
| Datasheet |
| Part | IRF240 |
|---|---|
| Description | REPETITIVE AVALANCHE AND dv/dt RATED |
| Feature | www. DataSheet4U. com PD - 90370 REPETIT IVE A V ALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Pr oduct Summary Part Number IRF240 BVDSS 200V RDS(on) 0. 18Ω ID 18A IRF24 0 200V, N-CHANNEL The HEXFETtechnol ogy is the key to International Rectifi er’s advanced line of power MOSFET tr ansistors. The efficient geometry and u nique processing of this latest “Stat e of the Art” design achieves: very l ow on-state resistance combined with hi gh transconductance; superior reverse e nergy and diode recovery dv/dt capabili ty. The HEXFET transistors also feature all of the well establish . |
| Manufacture | International Rectifier |
| Datasheet |
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