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dv/dt RATED. IRF240 Datasheet |
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PD - 90370
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFETTRANSISTORS
THRU-HOLE (TO-204AA/AE)
IRF240
200V, N-CHANNEL
Product Summary
Part Number BVDSS
IRF240
200V
RDS(on)
0.18Ω
ID
18A
The HEXFETtechnology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance; superior re-
verse energy and diode recovery dv/dt capability.
The HEXFET transistors also feature all of the well estab-
lished advantages of MOSFETs such as voltage control,
very fast switching, ease of paralleling and temperature
stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high energy pulse circuits.
TO-3
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
ID @ VGS = 0V, TC = 25°C
ID @ VGS = 0V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
18
11 A
72
125 W
1.0 W/°C
±20 V
450 mJ
18 A
12.5
mJ
5.0 V/ns
-55 to 150
oC
300 (0.063 in. (1.6mm) from case for 10s)
11.5(typical)
g
For footnotes refer to the last page
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1
01/24/01
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IRF240
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 — — V
VGS = 0V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown — 0.29 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.18
— — 0.21 Ω
VGS = 10V, ID = 11A➃
VGS = 10V, ID =18A ➃
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 — 4.0 V
6.1 — — S ( )
VDS = VGS, ID =250µA
VDS > 15V, IDS = 11A ➃
IDSS
Zero Gate Voltage Drain Current
— — 25
— — 250 µA
VDS= 160V,VGS=0V
VDS = 160V
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
— — 100 nA
— — -100
VGS = 20V
VGS = -20V
Qg Total Gate Charge
32 — 60
VGS =10V, ID =18A
Qgs Gate-to-Source Charge
2.2 — 10.6 nC
VDS = 100V
Qgd
Gate-to-Drain (‘Miller’) Charge
14 — 38
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 20
— — 152
ns
— — 58
VDD =100V, ID =18A,
RG =9.1Ω
tf Fall Time
— — 67
LS + LD
Total Inductance
— 6.1 — n H Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
— 1300
— 400 —
— 130 —
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode) ➀
——
——
18
72
A
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.5 V
— — 500 nS
— — 5.3 µC
Tj = 25°C, IS = 18A, VGS = 0V ➃
Tj = 25°C, IF = 18A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction to Case
Junction to Ambient
For footnotes refer to the last page
2
Min Typ Max Units
— — 1.0
°C/W
— — 30
Test Conditions
Typical socket mount
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IRF240
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
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Fig 4. Normalized On-Resistance
Vs. Temperature
3
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