SIGC08T60

www.DataSheet4U.com SIGC08T60 IGBT Chip FEATURES: 600V Trench & Field Stop technology low VCE(sat) low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module discrete components Applications: drives white goods resonant applications C G E Chip Type SIGC08T60 VCE 600V ICn 15A Die Size 2.86 x 2.82 mm2 Package sawn on foil Ordering Code Q67050A4282-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 2.86 x 2.82 2.014 x 2.014 0.361 x 0.513 8.0 / 5.2 70 150 0 1836 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm deg 2 mm 2 Edited by INFINEON Technologies AI PS DD CLS, L7531A, Edition 2, 27.01.2005 SIGC08T60 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj= 25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature SC data, VGE = 15V, VCC = 360V 1) Symbol VC E IC Icpuls V GE Tj, Ts t g Tvj = 150°C Tvj = 25°C tp Value 600...