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SIGC08T60 Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC08T60 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC08T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low tu rn-off losses • short tail current †¢ positive temperature coefficient • easy paralleling 3 This chip is used f or: • power module • discrete compo nents Applications: • drives • whit e goods • resonant applications C G E Chip Type SIGC08T60 VCE 600V ICn 15A Die Size 2. 86 x 2. 82 mm2 Package sawn on foil Ordering Code Q67050A428 2-A101 MECHANICAL PARAMETER: Raster si ze Emitter pad size Gate pad size Area total / active Thickness Wafer size Fla t position Max. possible chips per w . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC08T60 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC08T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low tu rn-off losses • short tail current †¢ positive temperature coefficient • easy paralleling 3 This chip is used f or: • power module • discrete compo nents Applications: • drives • whit e goods • resonant applications C G E Chip Type SIGC08T60 VCE 600V ICn 15A Die Size 2. 86 x 2. 82 mm2 Package sawn on foil Ordering Code Q67050A428 2-A101 MECHANICAL PARAMETER: Raster si ze Emitter pad size Gate pad size Area total / active Thickness Wafer size Fla t position Max. possible chips per w . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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