SIGC109T120R3

www.DataSheet4U.com Preliminary SIGC109T120R3 IGBT Chip FEATURES: 1200V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC109T120R3 VCE ICn Die Size 10.47 x 10.44 mm2 Package sawn on foil Ordering Code Q67050A4108-A001 1200V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 10.47 x 10.44 8x(2.114 x 4.391) 1.139 x 1.139 109.3 / 85.8 140 150 90 124 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L7681A, Edition 2, 26.06.2003 Preliminary SIGC109T120R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 100 200 ±20 -55 ... +150 Unit V A A V °C STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, ...