SIGC121T60NR2C

www.DataSheet4U.com SIGC121T60NR2C IGBT Chip in NPT-technology FEATURES: 600V NPT technology 100µm chip positive temperature coefficient easy paralleling integrated gate resistor This chip is used for: IGBT Modules Applications: drives C G E Chip Type VCE ICn 150A Die Size 11 x 11 mm2 Package sawn on foil Ordering Code Q67041-A4684A001 SIGC121T60NR2C 600V MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11 x 11 121 / 102.5 8x 6.2 x 2.55 mm 2 1.51 x 0.8 100 150 90 106 Photoimide 3200 nm Al Si 1% 1200 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm grd Edited by INFINEON Technologies AI PS DD HV3, L 7292-M, Edition 2, 28.11.2003 SIGC121T60NR2C MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 600 1) Unit V A A V °C 450 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25...