SIGC128T170R3

www.DataSheet4U.com SIGC128T170R3 IGBT Chip FEATURES: 1700V Trench + Field Stop technology low turn-off losses short tail current positive temperature coefficient easy paralleling 3 This chip is used for: power module C Applications: drives G E Chip Type SIGC128T170R3 VCE ICn Die Size 11.33 x 11.33 mm2 Package sawn on foil Ordering Code Q67050A4189-A001 1700V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.33 x 11.33 8 x ( 4.48 x 2.15 ) 1.18 x 1.09 128.4 / 99.9 190 150 90 104 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C mm µm mm grd 2 mm Edited by INFINEON Technologies AI PS DD HV3, L 7781-A, Edition 2, 04.09.03 SIGC128T170R3 MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1700 1) Unit V A A V °C 300 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTI...