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SIGC128T170R3 Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | SIGC128T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC128T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losse s • short tail current • positive t emperature coefficient • easy paralle ling 3 This chip is used for: • powe r module C Applications: • drives G E Chip Type SIGC128T170R3 VCE ICn Die Size 11. 33 x 11. 33 mm2 Package s awn on foil Ordering Code Q67050A4189- A001 1700V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max. possible chips per wafer Passivation frontside Emitte r metalization Collector met . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC128T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC128T170R3 IGBT Chip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losse s • short tail current • positive t emperature coefficient • easy paralle ling 3 This chip is used for: • powe r module C Applications: • drives G E Chip Type SIGC128T170R3 VCE ICn Die Size 11. 33 x 11. 33 mm2 Package s awn on foil Ordering Code Q67050A4189- A001 1700V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max. possible chips per wafer Passivation frontside Emitte r metalization Collector met . |
| Manufacture | Infineon Technologies |
| Datasheet |
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