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SIGC128T170R3 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC128T170R3
Description IGBT
Feature www.
DataSheet4U.
com SIGC128T170R3 IGBT Chip FEATURES:
• 1700V Trench + Field Stop technology
• low turn-off losse s
• short tail current
• positive t emperature coefficient
• easy paralle ling 3 This chip is used for:
• powe r module C Applications:
• drives G E Chip Type SIGC128T170R3 VCE ICn Die Size 11.
33 x 11.
33 mm2 Package s awn on foil Ordering Code Q67050A4189- A001 1700V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.
possible chips per wafer Passivation frontside Emitte r metalization Collector met .
Manufacture Infineon Technologies
Datasheet
Download SIGC128T170R3 Datasheet
Part SIGC128T170R3
Description IGBT
Feature www.
DataSheet4U.
com SIGC128T170R3 IGBT Chip FEATURES:
• 1700V Trench + Field Stop technology
• low turn-off losse s
• short tail current
• positive t emperature coefficient
• easy paralle ling 3 This chip is used for:
• powe r module C Applications:
• drives G E Chip Type SIGC128T170R3 VCE ICn Die Size 11.
33 x 11.
33 mm2 Package s awn on foil Ordering Code Q67050A4189- A001 1700V 100A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafe r size Flat position Max.
possible chips per wafer Passivation frontside Emitte r metalization Collector met .
Manufacture Infineon Technologies
Datasheet
Download SIGC128T170R3 Datasheet

SIGC128T170R3

SIGC128T170R3
SIGC128T170R3

SIGC128T170R3

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