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SIGC12T120 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC12T120
Description IGBT
Feature www.
DataSheet4U.
com SIGC12T120 IGBT Chi p FEATURES:
• 1200V Trench & Field St op technology
• low turn-off losses short tail current
• positive temp erature coefficient
• easy parallelin g 3 This chip is used for:
• power m odule C Applications:
• drives G E Chip Type SIGC12T120 VCE 1200V ICn 8A Die Size 3.
54 x 3.
5 mm2 Package s awn on foil Ordering Code Q67050A4102- A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area to tal / active Thickness Wafer size Flat position Max.
possible chips per wafer P assivation frontside Emitter metallizat ion Collector metallization .
Manufacture Infineon Technologies
Datasheet
Download SIGC12T120 Datasheet
Part SIGC12T120
Description IGBT
Feature www.
DataSheet4U.
com SIGC12T120 IGBT Chi p FEATURES:
• 1200V Trench & Field St op technology
• low turn-off losses short tail current
• positive temp erature coefficient
• easy parallelin g 3 This chip is used for:
• power m odule C Applications:
• drives G E Chip Type SIGC12T120 VCE 1200V ICn 8A Die Size 3.
54 x 3.
5 mm2 Package s awn on foil Ordering Code Q67050A4102- A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area to tal / active Thickness Wafer size Flat position Max.
possible chips per wafer P assivation frontside Emitter metallizat ion Collector metallization .
Manufacture Infineon Technologies
Datasheet
Download SIGC12T120 Datasheet

SIGC12T120

SIGC12T120
SIGC12T120

SIGC12T120

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