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SIGC12T120 Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC12T120 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC12T120 IGBT Chi p FEATURES: • 1200V Trench & Field St op technology • low turn-off losses â €¢ short tail current • positive temp erature coefficient • easy parallelin g 3 This chip is used for: • power m odule C Applications: • drives G E Chip Type SIGC12T120 VCE 1200V ICn 8A Die Size 3. 54 x 3. 5 mm2 Package s awn on foil Ordering Code Q67050A4102- A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area to tal / active Thickness Wafer size Flat position Max. possible chips per wafer P assivation frontside Emitter metallizat ion Collector metallization . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC12T120 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC12T120 IGBT Chi p FEATURES: • 1200V Trench & Field St op technology • low turn-off losses â €¢ short tail current • positive temp erature coefficient • easy parallelin g 3 This chip is used for: • power m odule C Applications: • drives G E Chip Type SIGC12T120 VCE 1200V ICn 8A Die Size 3. 54 x 3. 5 mm2 Package s awn on foil Ordering Code Q67050A4102- A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area to tal / active Thickness Wafer size Flat position Max. possible chips per wafer P assivation frontside Emitter metallizat ion Collector metallization . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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