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SIGC156T120R2C Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC156T120R2C |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1 200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient â €¢ easy paralleling • integrated gate resistor This chip is used for: • p ower module BSM100GD120DN2 Applications : • drives C G E Chip Type VCE ICn Die Size 12. 59 X 12. 59 mm2 Packag e sawn on foil Ordering Code Q67041A46 61-A003 SIGC156T120R2C 1200V 100A MEC HANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / act ive Thickness Wafer size Flat position Max. possible chips per wafer Pa . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC156T120R2C |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC156T120R2C IGBT Chip in NPT-technology FEATURES: • 1 200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient â €¢ easy paralleling • integrated gate resistor This chip is used for: • p ower module BSM100GD120DN2 Applications : • drives C G E Chip Type VCE ICn Die Size 12. 59 X 12. 59 mm2 Packag e sawn on foil Ordering Code Q67041A46 61-A003 SIGC156T120R2C 1200V 100A MEC HANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / act ive Thickness Wafer size Flat position Max. possible chips per wafer Pa . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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