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SIGC156T120R2C Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC156T120R2C
Description IGBT
Feature www.
DataSheet4U.
com SIGC156T120R2C IGBT Chip in NPT-technology FEATURES:
• 1 200V NPT technology 200µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient easy paralleling
• integrated gate resistor This chip is used for:
• p ower module BSM100GD120DN2 Applications :
• drives C G E Chip Type VCE ICn Die Size 12.
59 X 12.
59 mm2 Packag e sawn on foil Ordering Code Q67041A46 61-A003 SIGC156T120R2C 1200V 100A MEC HANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / act ive Thickness Wafer size Flat position Max.
possible chips per wafer Pa .
Manufacture Infineon Technologies
Datasheet
Download SIGC156T120R2C Datasheet
Part SIGC156T120R2C
Description IGBT
Feature www.
DataSheet4U.
com SIGC156T120R2C IGBT Chip in NPT-technology FEATURES:
• 1 200V NPT technology 200µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient easy paralleling
• integrated gate resistor This chip is used for:
• p ower module BSM100GD120DN2 Applications :
• drives C G E Chip Type VCE ICn Die Size 12.
59 X 12.
59 mm2 Packag e sawn on foil Ordering Code Q67041A46 61-A003 SIGC156T120R2C 1200V 100A MEC HANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / act ive Thickness Wafer size Flat position Max.
possible chips per wafer Pa .
Manufacture Infineon Technologies
Datasheet
Download SIGC156T120R2C Datasheet

SIGC156T120R2C

SIGC156T120R2C
SIGC156T120R2C

SIGC156T120R2C

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