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SIGC156T120R2CL Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC156T120R2CL |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC156T120R2CL IGB T Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip †¢ low turn-off losses • positive temp erature coefficient • easy parallelin g • integrated gate resistor This ch ip is used for: • power module BSM100 GD120DLC Applications: • drives C G E Chip Type VCE ICn Die Size 12. 5 9 X 12. 59 mm2 Package sawn on foil Or dering Code Q67041A4663-A003 SIGC156T1 20R2CL 1200V 100A MECHANICAL PARAMETER : Raster size Emitter pad size Gate pad size Area total / active Thickness Waf er size Flat position Max. possible chip s per wafer Passivation frontsi . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC156T120R2CL |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC156T120R2CL IGB T Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip †¢ low turn-off losses • positive temp erature coefficient • easy parallelin g • integrated gate resistor This ch ip is used for: • power module BSM100 GD120DLC Applications: • drives C G E Chip Type VCE ICn Die Size 12. 5 9 X 12. 59 mm2 Package sawn on foil Or dering Code Q67041A4663-A003 SIGC156T1 20R2CL 1200V 100A MECHANICAL PARAMETER : Raster size Emitter pad size Gate pad size Area total / active Thickness Waf er size Flat position Max. possible chip s per wafer Passivation frontsi . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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