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SIGC156T120R2CL Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC156T120R2CL
Description IGBT
Feature www.
DataSheet4U.
com SIGC156T120R2CL IGB T Chip in NPT-technology FEATURES:
• 1200V NPT technology
• 180µm chip low turn-off losses
• positive temp erature coefficient
• easy parallelin g
• integrated gate resistor This ch ip is used for:
• power module BSM100 GD120DLC Applications:
• drives C G E Chip Type VCE ICn Die Size 12.
5 9 X 12.
59 mm2 Package sawn on foil Or dering Code Q67041A4663-A003 SIGC156T1 20R2CL 1200V 100A MECHANICAL PARAMETER : Raster size Emitter pad size Gate pad size Area total / active Thickness Waf er size Flat position Max.
possible chip s per wafer Passivation frontsi .
Manufacture Infineon Technologies
Datasheet
Download SIGC156T120R2CL Datasheet
Part SIGC156T120R2CL
Description IGBT
Feature www.
DataSheet4U.
com SIGC156T120R2CL IGB T Chip in NPT-technology FEATURES:
• 1200V NPT technology
• 180µm chip low turn-off losses
• positive temp erature coefficient
• easy parallelin g
• integrated gate resistor This ch ip is used for:
• power module BSM100 GD120DLC Applications:
• drives C G E Chip Type VCE ICn Die Size 12.
5 9 X 12.
59 mm2 Package sawn on foil Or dering Code Q67041A4663-A003 SIGC156T1 20R2CL 1200V 100A MECHANICAL PARAMETER : Raster size Emitter pad size Gate pad size Area total / active Thickness Waf er size Flat position Max.
possible chip s per wafer Passivation frontsi .
Manufacture Infineon Technologies
Datasheet
Download SIGC156T120R2CL Datasheet

SIGC156T120R2CL

SIGC156T120R2CL
SIGC156T120R2CL

SIGC156T120R2CL

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