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SIGC158T170R3 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC158T170R3
Description IGBT
Feature www.
DataSheet4U.
com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES:
• 1700V T rench + Field Stop technology
• low t urn-off losses
• short tail current positive temperature coefficient
• easy paralleling 3 This chip is used for:
• power module C Applications:
• drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12.
57 x 12.
57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max.
p ossible chips per wafer Passivation fro ntside Emitter metalization .
Manufacture Infineon Technologies
Datasheet
Download SIGC158T170R3 Datasheet
Part SIGC158T170R3
Description IGBT
Feature www.
DataSheet4U.
com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES:
• 1700V T rench + Field Stop technology
• low t urn-off losses
• short tail current positive temperature coefficient
• easy paralleling 3 This chip is used for:
• power module C Applications:
• drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12.
57 x 12.
57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max.
p ossible chips per wafer Passivation fro ntside Emitter metalization .
Manufacture Infineon Technologies
Datasheet
Download SIGC158T170R3 Datasheet

SIGC158T170R3

SIGC158T170R3
SIGC158T170R3

SIGC158T170R3

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