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SIGC158T170R3 Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC158T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES: • 1700V T rench + Field Stop technology • low t urn-off losses • short tail current â €¢ positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12. 57 x 12. 57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max. p ossible chips per wafer Passivation fro ntside Emitter metalization . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC158T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com Preliminary SIGC15 8T170R3 IGBT Chip FEATURES: • 1700V T rench + Field Stop technology • low t urn-off losses • short tail current â €¢ positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC158T17 0R3 VCE ICn Die Size 12. 57 x 12. 57 m m2 Package sawn on foil Ordering Code Q67050A4227-A101 1700V 125A MECHANIC AL PARAMETER: Raster size Emitter pad s ize Gate pad size Area total / active T hickness Wafer size Flat position Max. p ossible chips per wafer Passivation fro ntside Emitter metalization . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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