SIGC16T120C

www.DataSheet4U.com SIGC16T120C IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 200µm chip short circuit prove positive temperature coefficient easy paralleling C This chip is used for: BUP 311D /BUP 212 Applications: drives G E Chip Type SIGC16T120C VCE 1200V ICn 8A Die Size 4.04 x 4 mm2 Package sawn on foil Ordering Code Q67041-A4673A003 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 4.04 x 4 16.16 / 10.4 1.88x2.18 0.71x1.08 200 150 0 898 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm deg Edited by INFINEON Technologies AI PS DD HV3, L 7131-M, Edition 2, 03.09.2003 SIGC16T120C MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 24 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unles...