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SIGC16T120C Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC16T120C
Description IGBT
Feature www.
DataSheet4U.
com SIGC16T120C IGBT Ch ip in NPT-technology FEATURES:
• 1200 V NPT technology
• 200µm chip
• sh ort circuit prove
• positive temperat ure coefficient
• easy paralleling C This chip is used for:
• BUP 311D /B UP 212 Applications:
• drives G E Chip Type SIGC16T120C VCE 1200V ICn 8 A Die Size 4.
04 x 4 mm2 Package sawn on foil Ordering Code Q67041-A4673A003 MECHANICAL PARAMETER: Raster size Are a total / active Emitter pad size Gate pad size Thickness Wafer size Flat posi tion Max.
possible chips per wafer Passi vation frontside Emitter metalization C ollector metalization Die bon .
Manufacture Infineon Technologies
Datasheet
Download SIGC16T120C Datasheet
Part SIGC16T120C
Description IGBT
Feature www.
DataSheet4U.
com SIGC16T120C IGBT Ch ip in NPT-technology FEATURES:
• 1200 V NPT technology
• 200µm chip
• sh ort circuit prove
• positive temperat ure coefficient
• easy paralleling C This chip is used for:
• BUP 311D /B UP 212 Applications:
• drives G E Chip Type SIGC16T120C VCE 1200V ICn 8 A Die Size 4.
04 x 4 mm2 Package sawn on foil Ordering Code Q67041-A4673A003 MECHANICAL PARAMETER: Raster size Are a total / active Emitter pad size Gate pad size Thickness Wafer size Flat posi tion Max.
possible chips per wafer Passi vation frontside Emitter metalization C ollector metalization Die bon .
Manufacture Infineon Technologies
Datasheet
Download SIGC16T120C Datasheet

SIGC16T120C

SIGC16T120C
SIGC16T120C

SIGC16T120C

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