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SIGC16T120C Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | SIGC16T120C |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC16T120C IGBT Ch ip in NPT-technology FEATURES: • 1200 V NPT technology • 200µm chip • sh ort circuit prove • positive temperat ure coefficient • easy paralleling C This chip is used for: • BUP 311D /B UP 212 Applications: • drives G E Chip Type SIGC16T120C VCE 1200V ICn 8 A Die Size 4. 04 x 4 mm2 Package sawn on foil Ordering Code Q67041-A4673A003 MECHANICAL PARAMETER: Raster size Are a total / active Emitter pad size Gate pad size Thickness Wafer size Flat posi tion Max. possible chips per wafer Passi vation frontside Emitter metalization C ollector metalization Die bon . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC16T120C |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC16T120C IGBT Ch ip in NPT-technology FEATURES: • 1200 V NPT technology • 200µm chip • sh ort circuit prove • positive temperat ure coefficient • easy paralleling C This chip is used for: • BUP 311D /B UP 212 Applications: • drives G E Chip Type SIGC16T120C VCE 1200V ICn 8 A Die Size 4. 04 x 4 mm2 Package sawn on foil Ordering Code Q67041-A4673A003 MECHANICAL PARAMETER: Raster size Are a total / active Emitter pad size Gate pad size Thickness Wafer size Flat posi tion Max. possible chips per wafer Passi vation frontside Emitter metalization C ollector metalization Die bon . |
| Manufacture | Infineon Technologies |
| Datasheet |
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