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SIGC20T120 Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC20T120 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC20T120 IGBT Chi p FEATURES: • 1200V Trench + Field St op technology • low turn-off losses â €¢ short tail current • positive temp erature coefficient • easy parallelin g 3 This chip is used for: • power m odule C Applications: • drives G E Chip Type SIGC20T120 VCE 1200V ICn 15A Die Size 4. 41 x 4. 47 mm2 Package sawn on foil Ordering Code Q67050A410 3-A001 MECHANICAL PARAMETER: Raster si ze Emitter pad size Gate pad size Area total / active Thickness Wafer size Fla t position Max. possible chips per wafer Passivation frontside Emitter metalliz ation Collector metallizatio . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC20T120 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC20T120 IGBT Chi p FEATURES: • 1200V Trench + Field St op technology • low turn-off losses â €¢ short tail current • positive temp erature coefficient • easy parallelin g 3 This chip is used for: • power m odule C Applications: • drives G E Chip Type SIGC20T120 VCE 1200V ICn 15A Die Size 4. 41 x 4. 47 mm2 Package sawn on foil Ordering Code Q67050A410 3-A001 MECHANICAL PARAMETER: Raster si ze Emitter pad size Gate pad size Area total / active Thickness Wafer size Fla t position Max. possible chips per wafer Passivation frontside Emitter metalliz ation Collector metallizatio . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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