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SIGC20T120 Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC20T120
Description IGBT
Feature www.
DataSheet4U.
com SIGC20T120 IGBT Chi p FEATURES:
• 1200V Trench + Field St op technology
• low turn-off losses short tail current
• positive temp erature coefficient
• easy parallelin g 3 This chip is used for:
• power m odule C Applications:
• drives G E Chip Type SIGC20T120 VCE 1200V ICn 15A Die Size 4.
41 x 4.
47 mm2 Package sawn on foil Ordering Code Q67050A410 3-A001 MECHANICAL PARAMETER: Raster si ze Emitter pad size Gate pad size Area total / active Thickness Wafer size Fla t position Max.
possible chips per wafer Passivation frontside Emitter metalliz ation Collector metallizatio .
Manufacture Infineon Technologies
Datasheet
Download SIGC20T120 Datasheet
Part SIGC20T120
Description IGBT
Feature www.
DataSheet4U.
com SIGC20T120 IGBT Chi p FEATURES:
• 1200V Trench + Field St op technology
• low turn-off losses short tail current
• positive temp erature coefficient
• easy parallelin g 3 This chip is used for:
• power m odule C Applications:
• drives G E Chip Type SIGC20T120 VCE 1200V ICn 15A Die Size 4.
41 x 4.
47 mm2 Package sawn on foil Ordering Code Q67050A410 3-A001 MECHANICAL PARAMETER: Raster si ze Emitter pad size Gate pad size Area total / active Thickness Wafer size Fla t position Max.
possible chips per wafer Passivation frontside Emitter metalliz ation Collector metallizatio .
Manufacture Infineon Technologies
Datasheet
Download SIGC20T120 Datasheet

SIGC20T120

SIGC20T120
SIGC20T120

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