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SIGC223T120R2CL Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC223T120R2CL
Description IGBT
Feature www.
DataSheet4U.
com SIGC223T120R2CL IGB T Chip in NPT-technology FEATURES:
• 1200V NPT technology
• 180µm chip short circuit prove
• positive temp erature coefficient
• easy parallelin g This chip is used for:
• IGBT-Modu les BSM150GB120DLC Applications:
• dr ives C G E Chip Type VCE ICn Die Size 14.
4 x 15.
5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 S IGC223T120R2CL 1200V 150A MECHANICAL P ARAMETER: Raster size Area total / acti ve Emitter pad size Gate pad size Thick ness Wafer size Flat position Max.
possi ble chips per wafer Passivation frontsi de Emitter metalization Colle .
Manufacture Infineon Technologies
Datasheet
Download SIGC223T120R2CL Datasheet
Part SIGC223T120R2CL
Description IGBT
Feature www.
DataSheet4U.
com SIGC223T120R2CL IGB T Chip in NPT-technology FEATURES:
• 1200V NPT technology
• 180µm chip short circuit prove
• positive temp erature coefficient
• easy parallelin g This chip is used for:
• IGBT-Modu les BSM150GB120DLC Applications:
• dr ives C G E Chip Type VCE ICn Die Size 14.
4 x 15.
5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 S IGC223T120R2CL 1200V 150A MECHANICAL P ARAMETER: Raster size Area total / acti ve Emitter pad size Gate pad size Thick ness Wafer size Flat position Max.
possi ble chips per wafer Passivation frontsi de Emitter metalization Colle .
Manufacture Infineon Technologies
Datasheet
Download SIGC223T120R2CL Datasheet

SIGC223T120R2CL

SIGC223T120R2CL
SIGC223T120R2CL

SIGC223T120R2CL

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