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SIGC223T120R2CL Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC223T120R2CL |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC223T120R2CL IGB T Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip †¢ short circuit prove • positive temp erature coefficient • easy parallelin g This chip is used for: • IGBT-Modu les BSM150GB120DLC Applications: • dr ives C G E Chip Type VCE ICn Die Size 14. 4 x 15. 5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 S IGC223T120R2CL 1200V 150A MECHANICAL P ARAMETER: Raster size Area total / acti ve Emitter pad size Gate pad size Thick ness Wafer size Flat position Max. possi ble chips per wafer Passivation frontsi de Emitter metalization Colle . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC223T120R2CL |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC223T120R2CL IGB T Chip in NPT-technology FEATURES: • 1200V NPT technology • 180µm chip †¢ short circuit prove • positive temp erature coefficient • easy parallelin g This chip is used for: • IGBT-Modu les BSM150GB120DLC Applications: • dr ives C G E Chip Type VCE ICn Die Size 14. 4 x 15. 5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 S IGC223T120R2CL 1200V 150A MECHANICAL P ARAMETER: Raster size Area total / acti ve Emitter pad size Gate pad size Thick ness Wafer size Flat position Max. possi ble chips per wafer Passivation frontsi de Emitter metalization Colle . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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