SIGC223T120R2CL

www.DataSheet4U.com SIGC223T120R2CL IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 180µm chip short circuit prove positive temperature coefficient easy paralleling This chip is used for: IGBT-Modules BSM150GB120DLC Applications: drives C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code Q67050-A4286A101 SIGC223T120R2CL 1200V 150A MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.4 x 15.5 223.2 / 189.9 8x( 3.67x6.77 ) 1.49 x 1.51 180 150 90 54 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7121-P, Edition 2, 03.09.2003 SIGC223T120R2CL MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 450 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTER...