SIGC223T120R2CS

www.DataSheet4U.com Preliminary SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 175µm chip low turn-off losses short tail current positive temperature coefficient easy paralleling integrated gate resistor This chip is used for: IGBT Modules Applications: drives, SMPS, resonant applications C G E Chip Type VCE ICn Die Size 14.4 x 15.5 mm2 Package sawn on foil Ordering Code tbd SIGC223T120R2CS 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.4 X 15.5 8x( 3.67x6.77 ) 1.49 x 1.51 223.5 / 189.9 175 150 90 54 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month µm mm grd mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7121T, Edition 1, 24.01.02 Preliminary SIGC223T120R2CS MAXIMUM RATINGS: Parameter Collector-emitter voltage DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature Symbol VCE IC Icpuls VGE Tj, Tstg Value 1200 150 300 ±20 -55 ... +150 Unit V A A V °C STATIC CHARACTERISTICS (tested on chip), Tj...