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SIGC28T60 Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC28T60 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC28T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low tu rn-off losses • short tail current †¢ positive temperature coefficient • easy paralleling 3 This chip is used f or: • power module • discrete compo nents Applications: • drives C G E Chip Type SIGC28T60 VCE 600V ICn 50 A Die Size 6. 57 x 4. 2 mm2 Package saw n on foil Ordering Code Q67050A4337-A1 01 MECHANICAL PARAMETER: Raster size E mitter pad size Gate pad size Area tota l / active Thickness Wafer size Flat po sition Max. possible chips per wafer Pa ssivation frontside Emitter meta . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC28T60 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC28T60 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low tu rn-off losses • short tail current †¢ positive temperature coefficient • easy paralleling 3 This chip is used f or: • power module • discrete compo nents Applications: • drives C G E Chip Type SIGC28T60 VCE 600V ICn 50 A Die Size 6. 57 x 4. 2 mm2 Package saw n on foil Ordering Code Q67050A4337-A1 01 MECHANICAL PARAMETER: Raster size E mitter pad size Gate pad size Area tota l / active Thickness Wafer size Flat po sition Max. possible chips per wafer Pa ssivation frontside Emitter meta . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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