GaAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
LN58
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
...
Description
Infrared Light Emitting Diodes
LN58
GaAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 3.5 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small size, thin side-view type package
3.9±0.3 Not soldered
ø2.4 4.5±0.3 1.2
2.9±0.25 0.9 1.7±0.2 0.8
12.8 min.
2.8
2.4 1.5
2-1.2±0.3
2-0.45±0.15 1 2.54 R1.2 2 0.45±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
R0.6
Symbol PD IF IFP
*
Ratings 75 50 1 3 –25 to +85 –30 to+100
Unit mW mA A V ˚C ˚C
1: Cathode 2: Anode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 3V VR = 0V, f = 1MHz
The angle in which radiant intencity is 50%
min 1.8
typ 3.5 950 50
max
Unit mW nm nm
1.5 10 35 35
V µA pF deg.
1
Infrared Light Emitting Diodes
LN58
IF — Ta
60 10 2
IFP — Duty cycle
80 Ta = 25˚C 70
IF — VF
Ta = 25˚C
IF (mA)
IFP (A)
50
IF (mA) Forward current
10 –1 1 10 10 2
10
60 50 40 30 20 10
Allowable forward current
40
Pulse forward current
1
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