SIGC42T170R2C

www.DataSheet4U.com SIGC42T170R2C IGBT Chip in NPT-technology FEATURES: 1700V NPT technology 280µm chip positive temperature coefficient easy paralleling integrated gate resistor C This chip is used for: chip only Applications: drives G E Chip Type SIGC42T170R2C VCE 1700V ICn 17A Die Size 6.51 x 6.51 mm2 Package sawn on foil Ordering Code Q67050-A4117A003 MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 6.51 x 6.51 42.38 / 23.8 2x( 1.7x3.2) 1.2 x 1.2 280 150 90 328 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, ≤500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm deg mm 2 Edited by INFINEON Technologies AI PS DD HV3, L 7341M, Edition 2, 04.09.2003 SIGC42T170R2C MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1700 1) Unit V A A V °C 51 ±20 -55 ... +150 depending on thermal properties of assembly STATIC CHARACTERISTICS (tested on chip), Tj=2...