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SIGC42T170R3 Datasheet, Equivalent, IGBT.IGBT IGBT |
| Part | SIGC42T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC42T170R3 IGBT C hip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive te mperature coefficient • easy parallel ing 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC42T170R3 VCE 1700V ICn 29A Die Size 6. 5 x 6. 46 mm2 Pack age sawn on foil Ordering Code Q67050A 4151-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Ar ea total / active Thickness Wafer size Flat position Max. possible chips per wa fer Passivation frontside Emitter metal ization Collector metalizati . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC42T170R3 |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC42T170R3 IGBT C hip FEATURES: • 1700V Trench + Field Stop technology • low turn-off losses • short tail current • positive te mperature coefficient • easy parallel ing 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC42T170R3 VCE 1700V ICn 29A Die Size 6. 5 x 6. 46 mm2 Pack age sawn on foil Ordering Code Q67050A 4151-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Ar ea total / active Thickness Wafer size Flat position Max. possible chips per wa fer Passivation frontside Emitter metal ization Collector metalizati . |
| Manufacture | Infineon Technologies |
| Datasheet |
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