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SIGC57T120R3L Datasheet, Equivalent, IGBT.IGBT IGBT |
Part | SIGC57T120R3L |
---|---|
Description | IGBT |
Feature | www. DataSheet4U. com SIGC57T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • lo w turn-off losses • short tail curren t • positive temperature coefficient • easy paralleling 3 This chip is us ed for: • power module C Applicatio ns: • drives G E Chip Type SIGC57T 120R3L VCE 1200V ICn 50A Die Size 7. 6 x 7. 53 mm2 Package sawn on foil Ord ering Code Q67050A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad siz e ( include gate pad ) Gate pad size Ar ea total / active Thickness Wafer size Flat position Max. possible chips per wa fer Passivation frontside Emitt . |
Manufacture | Infineon Technologies |
Datasheet |
Part | SIGC57T120R3L |
---|---|
Description | IGBT |
Feature | www. DataSheet4U. com SIGC57T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • lo w turn-off losses • short tail curren t • positive temperature coefficient • easy paralleling 3 This chip is us ed for: • power module C Applicatio ns: • drives G E Chip Type SIGC57T 120R3L VCE 1200V ICn 50A Die Size 7. 6 x 7. 53 mm2 Package sawn on foil Ord ering Code Q67050A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad siz e ( include gate pad ) Gate pad size Ar ea total / active Thickness Wafer size Flat position Max. possible chips per wa fer Passivation frontside Emitt . |
Manufacture | Infineon Technologies |
Datasheet |
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