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SIGC57T120R3L Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC57T120R3L
Description IGBT
Feature www.
DataSheet4U.
com SIGC57T120R3L IGBT Chip FEATURES:
• 1200V Trench + Field Stop technology
• 120µm chip
• lo w turn-off losses
• short tail curren t
• positive temperature coefficient
• easy paralleling 3 This chip is us ed for:
• power module C Applicatio ns:
• drives G E Chip Type SIGC57T 120R3L VCE 1200V ICn 50A Die Size 7.
6 x 7.
53 mm2 Package sawn on foil Ord ering Code Q67050A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad siz e ( include gate pad ) Gate pad size Ar ea total / active Thickness Wafer size Flat position Max.
possible chips per wa fer Passivation frontside Emitt .
Manufacture Infineon Technologies
Datasheet
Download SIGC57T120R3L Datasheet
Part SIGC57T120R3L
Description IGBT
Feature www.
DataSheet4U.
com SIGC57T120R3L IGBT Chip FEATURES:
• 1200V Trench + Field Stop technology
• 120µm chip
• lo w turn-off losses
• short tail curren t
• positive temperature coefficient
• easy paralleling 3 This chip is us ed for:
• power module C Applicatio ns:
• drives G E Chip Type SIGC57T 120R3L VCE 1200V ICn 50A Die Size 7.
6 x 7.
53 mm2 Package sawn on foil Ord ering Code Q67050A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad siz e ( include gate pad ) Gate pad size Ar ea total / active Thickness Wafer size Flat position Max.
possible chips per wa fer Passivation frontside Emitt .
Manufacture Infineon Technologies
Datasheet
Download SIGC57T120R3L Datasheet

SIGC57T120R3L

SIGC57T120R3L
SIGC57T120R3L

SIGC57T120R3L

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