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LN59

Panasonic Semiconductor

GaAs Bi-directional Infrared Light Emitting Diodes

Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 ø2.5±0.2 6.0±0.2 ...


Panasonic Semiconductor

LN59

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Description
Infrared Light Emitting Diodes LN59, LNA2702L GaAs Bi-directional Infrared Light Emitting Diodes LN59 ø2.5±0.2 6.0±0.2 1.0 Not soldered Unit : mm 4.0±0.2 1.8±0.2 For light source of VCR (VHS System) Features Two-way directivity Small resin package Long lifetime, high reliability Long lead wire type (LNA2702L) High-power output, high-efficiency : PO = 1.8 mW (min.) 2-R1.25±0.1 4.0±0.2 1.0 3.3 15.3±1.0 2-0.8 max. 2-0.5±0.1 1 2 2.54 0.5±0.1 C0.5 1: Anode 2: Cathode Applications Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor LNA2702L Not soldered ø2.5±0.2 6.0±0.2 4.0±0.2 3.3 1.0 4.0±0.2 1.8±0.2 2-R1.25±0.1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 75 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C 16.6 1.0 2-0.8 max. 2-0.5±0.1 2-0.7 max. 0.5±0.1 33.7±0.5 3.5 2-0.5±0.1 1 2 2.54 C0.5 1: Anode 2: Cathode ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins * Symbol P O* λP ∆λ VF IR Ct Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz min 1.8 typ 950 50 1.3 35 max Unit mW nm nm 1.5 10 V µA pF Radiant power PO shows ea...




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