GaAs Bi-directional Infrared Light Emitting Diodes
Infrared Light Emitting Diodes
LN59, LNA2702L
GaAs Bi-directional Infrared Light Emitting Diodes
LN59
ø2.5±0.2
6.0±0.2 ...
Description
Infrared Light Emitting Diodes
LN59, LNA2702L
GaAs Bi-directional Infrared Light Emitting Diodes
LN59
ø2.5±0.2
6.0±0.2 1.0 Not soldered
Unit : mm
4.0±0.2 1.8±0.2
For light source of VCR (VHS System) Features
Two-way directivity Small resin package Long lifetime, high reliability Long lead wire type (LNA2702L) High-power output, high-efficiency : PO = 1.8 mW (min.)
2-R1.25±0.1
4.0±0.2 1.0 3.3
15.3±1.0
2-0.8 max. 2-0.5±0.1 1 2 2.54 0.5±0.1
C0.5 1: Anode 2: Cathode
Applications
Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor
LNA2702L
Not soldered
ø2.5±0.2
6.0±0.2 4.0±0.2 3.3 1.0
4.0±0.2
1.8±0.2
2-R1.25±0.1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
Symbol PD IF IFP* VR Topr Tstg
Ratings 75 50 1 3 –25 to +85 – 40 to +100
Unit mW mA A V ˚C
16.6 1.0
2-0.8 max. 2-0.5±0.1 2-0.7 max. 0.5±0.1
33.7±0.5 3.5
2-0.5±0.1 1 2 2.54 C0.5 1: Anode 2: Cathode
˚C
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins
*
Symbol P O* λP ∆λ VF IR Ct
Conditions IF = 50mA IF = 20mA IF = 20mA IF = 50mA VR = 3V VR = 0V, f = 1MHz
min 1.8
typ 950 50 1.3 35
max
Unit mW nm nm
1.5 10
V µA pF
Radiant power PO shows ea...
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