SIGC81T120R2C

www.DataSheet4U.com SIGC81T120R2C IGBT Chip in NPT-technology FEATURES: 1200V NPT technology 200µm chip low turn-off losses positive temperature coefficient easy paralleling integrated gate resistor This chip is used for: power module BSM 50GD120DN2 Applications: drives C G E Chip Type SIGC81T120R2C VCE 1200V ICn 50A Die Size 9.08 X 8.98 mm2 Package sawn on foil Ordering Code Q67041A4701-A003 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 9.08 X 8.98 8 x ( 2.6 x 1.78 ) 1.46 x 0.8 81.5 / 63.5 200 150 90 167 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.65mm ; max 1.2mm store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C µm mm 2 mm grd Edited by INFINEON Technologies AI PS DD HV3, L 7161-M, Edition 2, 03.09.2003 SIGC81T120R2C MAXIMUM RATINGS: Parameter Collector-emitter voltage, Tj=25 °C DC collector current, limited by Tjmax Pulsed collector current, tp limited by Tjmax Gate emitter voltage Operating junction and storage temperature 1) Symbol V CE IC Icpuls V GE Tj, Ts t g Value 1200 1) Unit V A A V °C 150 ±20 -55 ... +150 depending on thermal properties of asse...