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SIGC81T120R2CL Datasheet, Equivalent, IGBT.IGBT IGBT |
　
　
　
| Part | SIGC81T120R2CL |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: • 1 200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient â €¢ easy paralleling • integrated gate resistor This chip is used for: • p ower module BSM50GD120DLC Applications: • drives C G E Chip Type VCE I Cn 50A Die Size 9. 08 X 8. 98 mm2 Packa ge sawn on foil Ordering Code Q67041A4 700-A001 SIGC81T120R2CL 1200V MECHANI CAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passiv . |
| Manufacture | Infineon Technologies |
| Datasheet |
| Part | SIGC81T120R2CL |
|---|---|
| Description | IGBT |
| Feature | www. DataSheet4U. com SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES: • 1 200V NPT technology 180µm chip • low turn-off losses • short tail current • positive temperature coefficient â €¢ easy paralleling • integrated gate resistor This chip is used for: • p ower module BSM50GD120DLC Applications: • drives C G E Chip Type VCE I Cn 50A Die Size 9. 08 X 8. 98 mm2 Packa ge sawn on foil Ordering Code Q67041A4 700-A001 SIGC81T120R2CL 1200V MECHANI CAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passiv . |
| Manufacture | Infineon Technologies |
| Datasheet |
　
　
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