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SIGC81T120R2CL Datasheet, Equivalent, IGBT.

IGBT

IGBT

 

 

 

Part SIGC81T120R2CL
Description IGBT
Feature www.
DataSheet4U.
com SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES:
• 1 200V NPT technology 180µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient easy paralleling
• integrated gate resistor This chip is used for:
• p ower module BSM50GD120DLC Applications:
• drives C G E Chip Type VCE I Cn 50A Die Size 9.
08 X 8.
98 mm2 Packa ge sawn on foil Ordering Code Q67041A4 700-A001 SIGC81T120R2CL 1200V MECHANI CAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passiv .
Manufacture Infineon Technologies
Datasheet
Download SIGC81T120R2CL Datasheet
Part SIGC81T120R2CL
Description IGBT
Feature www.
DataSheet4U.
com SIGC81T120R2CL IGBT Chip in NPT-technology FEATURES:
• 1 200V NPT technology 180µm chip
• low turn-off losses
• short tail current
• positive temperature coefficient easy paralleling
• integrated gate resistor This chip is used for:
• p ower module BSM50GD120DLC Applications:
• drives C G E Chip Type VCE I Cn 50A Die Size 9.
08 X 8.
98 mm2 Packa ge sawn on foil Ordering Code Q67041A4 700-A001 SIGC81T120R2CL 1200V MECHANI CAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passiv .
Manufacture Infineon Technologies
Datasheet
Download SIGC81T120R2CL Datasheet

SIGC81T120R2CL

SIGC81T120R2CL
SIGC81T120R2CL

SIGC81T120R2CL

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