LN65

Infrared Light Emitting Diodes LN65 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 5.5 mW (typ.) Good radiant power output linearity with respect to input current Suited for use in high-speed modulation Infrared light emission close to monochromatic light : λP = 950 nm (typ.) 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.5 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 2.54 R1.75 Not soldered ø3.5±0.2 4.2±0.3 2.3 1.9 1.2 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP * Ratings 160 100 1.5 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C 1 2 1: Cathode 2: Anode VR Topr Tstg f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Half-power angle Symbol PO λP ∆λ VF IR Ct θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz The angle in which radiant intencity is 50% min 4.3 typ 5.5 950 50 1.3 50 35 max Unit mW nm nm 1.6 10 V µA pF deg. 1 LN65 Infrared Light Emitting Diodes IF — Ta 120 10 2 IFP — Duty cycle 120 Ta = 25˚C 100 IF — VF Ta = 25˚C IF (mA) IFP (A) 100 IF (mA) Forward current 10 –1 1 10 10 2 10 Allowable forward current 80 80 ...