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CM20-12A Datasheet, Equivalent, POWER TRANSISTOR.NPN SILICON RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR |
　
　
　
| Part | CM20-12A |
|---|---|
| Description | NPN SILICON RF POWER TRANSISTOR |
| Feature | www. DataSheet4U. com CM20-12A NPN SILIC ON RF POWER TRANSISTOR DESCRIPTION: The ASI CM20-12A is Designed for Class C, FM Land Mobile Applications up to 470 M Hz. FEATURES: • Internal Input Match ing Network • PG = 6. 2 dB at 20 W/470 MHz • Omnigoldâ„¢ Metalization Syste m • Common Emitter Configuration PAC KAGE STYLE . 500 6L FLG C A 2x ØN FU LL R D B G . 725/18,42 F E MAXIMUM RATI NGS H K J I L M IC VCBO VCEO VEBO PD ISS TJ TSTG θJC 4. 8 A D IM M IN IM U M inche s / m m M AX IM U M inche s / m m 36 V 16 V 4. 0 V 70 W @ TC = 25 ° C -65 °C to +200 °C -65 °C to +150  °C 2. 5 °C/W A B C D E F G H I . |
| Manufacture | ASI |
| Datasheet |
| Part | CM20-12A |
|---|---|
| Description | NPN SILICON RF POWER TRANSISTOR |
| Feature | www. DataSheet4U. com CM20-12A NPN SILIC ON RF POWER TRANSISTOR DESCRIPTION: The ASI CM20-12A is Designed for Class C, FM Land Mobile Applications up to 470 M Hz. FEATURES: • Internal Input Match ing Network • PG = 6. 2 dB at 20 W/470 MHz • Omnigoldâ„¢ Metalization Syste m • Common Emitter Configuration PAC KAGE STYLE . 500 6L FLG C A 2x ØN FU LL R D B G . 725/18,42 F E MAXIMUM RATI NGS H K J I L M IC VCBO VCEO VEBO PD ISS TJ TSTG θJC 4. 8 A D IM M IN IM U M inche s / m m M AX IM U M inche s / m m 36 V 16 V 4. 0 V 70 W @ TC = 25 ° C -65 °C to +200 °C -65 °C to +150  °C 2. 5 °C/W A B C D E F G H I . |
| Manufacture | ASI |
| Datasheet |
　
　
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