GTT3434

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/10/31 REVISED DATE : GTT3434 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 34m 6.1A The GTT3434 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications. Description Features * Low on-resistance *Capable of 2.5V gate drive Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , [email protected] Continuous Drain Current , [email protected] Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 30 ±12 6.1 4.9 30 1.14 0.01 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 110 Unit /W GTT3434 Page: 1/4 ISSUED DATE :2006/10/31 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) unless otherwise specified) Min. 30 0.6 Typ...