GTT3585

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/23 REVISED DATE : GTT3585 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description N-CH BVDSS 20V N-CH RDS(ON) 75m N-CH ID 3.5A P-CH BVDSS -20V N-CH RDS(ON) 160m N-CH ID -2.5A The GTT3585 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The TSSOP-6 package is universally used for all commercial-industrial surface mount applications. Features *Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions REF. A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ 20 ± 12 3.5 2.8 10 1.14 0.01 -20 ± 12 -2.5 -1.97 -10 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 110 Unit /W GTT3585 Page: 1/7 ISSUED DATE :2006/02/23 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified)...