2SK3642

DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3642 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3642-ZK PACKAGE TO-252 (MP-3ZK) FEATURES Low on-state resistance RDS(on)1 = 9.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 16 mΩ MAX. (VGS = 4.5 V, ID = 18 A) Low Ciss: Ciss = 1100 pF TYP. Built-in gate protection diode (TO-252) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 30 ±20 ±64 ±190 36 1.0 150 –55 to + 150 25 62 V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note2 Note2 IAS EAS Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Do...