DatasheetsPDF.com

G1270 Dataheets PDF



Part Number G1270
Manufacturers GTM
Logo GTM
Description NPN EPITAXIAL PLANAR TRANSISTOR
Datasheet G1270 DatasheetG1270 Datasheet (PDF)

www.DataSheet4U.com ISSUED DATE :2005/08/01 REVISED DATE : G1270 Description Features P NP EP ITAXI AL PL ANAR T RANSI STOR The G1270 is designed for general purpose switching and amplifier applications. Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66.

  G1270   G1270



Document
www.DataSheet4U.com ISSUED DATE :2005/08/01 REVISED DATE : G1270 Description Features P NP EP ITAXI AL PL ANAR T RANSI STOR The G1270 is designed for general purpose switching and amplifier applications. Excellent hFE(2)=25(Min.) @ VCE=-6V, IC=-400mA Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Device Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ Tstg Ratings -35 -30 -5 -500 625 150 -55 ~ +150 Unit V V V mA mW Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Cob Min. -35 -30 -5 70 25 100 Typ. - unless otherwise noted) Max. -100 -100 -0.25 -1.0 240 8 MHz pF Unit V V V nA nA V V IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-100uA, IC=0 VCB=-35V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA VCE=-1V, IC=-10mA, f=100MHz VCB=-10V, IE=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Test Conditions Classification Of hFE Rank hFE1 Range hFE2 Range O 70 - 140 Min. 25 Y 120 - 240 Min. 40 1/2 ISSUED DATE :2005/08/01 REVISED DATE : Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 2/2 .


G111K G1270 G130


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)