N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
G1332E
N-CHANNEL ENHANCE...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
G1332E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 600m 600mA
Description
The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D)
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Ratings 20 ±5 600 470 2.5 1.0 0.008 -55 ~ +150 Value 125
Unit V V mA mA A W W/
Thermal Data
Parameter Thermal Resistance Junction-ambient3 Max. Unit /W
G1332E
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ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 4 10 15 2 38 17 12 Max. 1.2 ±10 1 10 600 1200 2 60 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=...
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