G1332E

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C G1332E N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 600m 600mA Description The G1332E provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. *Simple Gate Drive *Small Package Outline *2KV ESD Rating (Per MIL-STD-883D) Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 20 ±5 600 470 2.5 1.0 0.008 -55 ~ +150 Value 125 Unit V V mA mA A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W G1332E Page: 1/4 ISSUED DATE :2005/03/10 REVISED DATE :2006/11/24C Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 20 0.5 Typ. 0.02 1 1.3 0.3 0.5 4 10 15 2 38 17 12 Max. 1.2 ±10 1 10 600 1200 2 60 pF ns nC Unit V V/ V S uA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=...