G138

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/03/01 REVISED DATE : G138 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 3.5 500mA The G138 has been designed to minimize on-state resistance, while provide rugged, reliable and fast switching performance. The G138 is universally used for all commercial-industrial surface mount applications. Description Features *Simple Drive Requirement *Small Package Outline Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings 50 ±20 500 400 800 225 0.002 -55 ~ +150 Value 556 Unit V V mA mA mA mW W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2006/03/01 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) unless otherwise specified) Min. 50 0.5 Typ. 500 Max. 2.0 100 1 3.5 6.0 50 25 5 pF Unit V V mS nA uA Test Condi...