P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Pb Free Plating Product
ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B
G152B
P-CHANNEL ENHANCEM...
Description
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B
G152B
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 0.3 -0.7A
The G152B provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Description
Features
Low On-State Resistance:0.3 (max) Ultra High Speed Switching Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery System
Applications
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Symbol VDS VGS ID IDM PD @TA=25 Tj, Tstg Symbol Rthj-a
Operating Junction and Storage Temperature Range
Ratings -20 12 -0.7 -2.8 0.5 0.01 -55 ~ +150 Ratings 90
Unit V V A A W W/
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max.
Unit /W
1/4
ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. -20 -0.5 Typ. -0.1 1....
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