G152B

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B G152B P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 0.3 -0.7A The G152B provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The G152B is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description Features Low On-State Resistance:0.3 (max) Ultra High Speed Switching Notebook PCs Cellular and portable phones On-board power supplies Li-ion battery System Applications Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Symbol VDS VGS ID IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Operating Junction and Storage Temperature Range Ratings -20 12 -0.7 -2.8 0.5 0.01 -55 ~ +150 Ratings 90 Unit V V A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2005/01/26 REVISED DATE :2005/03/22B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. -20 -0.5 Typ. -0.1 1....