G2301

www.DataSheet4U.com Pb Free Plating Product CORPORATION G2301 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B The G2301 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The G2301 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Description BVDSS RDS(ON) ID -20V 130m -2.6A Features Applications Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged Power Management in Notebook Computer Portable Equipment Battery Powered System. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a -20 12 -2.6 -2.1 -10 1.38 0.01 -55 ~ +150 Ratings 90 V V A A A W W/ Thermal Data Parameter Thermal Resistance Junction-ambient3 Max. Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2004/10/...