G2302

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B G2302 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 85m 3.2A The G2302 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. Description *Capable of 2.5V gate drive *Small Package Outline Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 0 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA =25 ID @TA =70 IDM PD @TA =25 Tj, Tstg Symbol Rthj-a Ratings 20 12 3.2 2.6 10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 20 0.5 Typ. 0.1 6 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50 Max. 1.2 100 1 10 85 115 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=3.6A VGS= 12V Symbol BVDSS...