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G2N3904 Dataheets PDF



Part Number G2N3904
Manufacturers GTM
Logo GTM
Description NPN TRANSISTOR
Datasheet G2N3904 DatasheetG2N3904 Datasheet (PDF)

www.DataSheet4U.com CORPORATION Description Features ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C G2N3904 N P N E P I TA X I A L P L A N A R T R A N S I S T O R The G2N3904 is designed for general purpose switching and amplifier applications. *Pb-free package are available *Collector-Emitter Voltage: VCEO=40V *Collect Dissipation: Pc (max) =625mW *Complementary to G2N3906 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Ma.

  G2N3904   G2N3904


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www.DataSheet4U.com CORPORATION Description Features ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C G2N3904 N P N E P I TA X I A L P L A N A R T R A N S I S T O R The G2N3904 is designed for general purpose switching and amplifier applications. *Pb-free package are available *Collector-Emitter Voltage: VCEO=40V *Collect Dissipation: Pc (max) =625mW *Complementary to G2N3906 Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Junction Temperature Storage Temperature Range Total Power Dissipation ,unless otherwise specified) Symbol Ratings Unit VCBO VCEO VEBO IC Tj TsTG PD ,unless otherwise specified) Max. 50 50 200 300 850 950 300 4 8 35 35 200 50 Unit V V V nA nA mV mV mV mV 60 40 6 200 +150 -55 ~ +150 625 V V V mA mW Electrical Characteristics(Ta = 25 Symbol BVCBO BVCEO BVEBO ICEX IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 hFE4 hFE5 fT Cob Cib td tr tstg tf Min. 60 40 6 650 40 70 100 60 30 300 Typ. - MHz pF pF ns ns ns ns Test Conditions IC=10uA , IE=0 IC=1mA , IB=0 IE=10uA, IC=0 VCE=30V, VEB=3V VEB=3V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=1V, IC=0.1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA VCE=20V, IE=-10mA, f=100MHz VCB=10V, f=100KHz VEB=0.5V, f=100KHz VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA VCC=3V, IC=10mA, IB1=-IB2=1mA VCC=3V, IC=10mA, IB1=-IB2=1mA G2N3904 Page: 1/2 CORPORATION Characteristics Curve ISSUED DATE :2003/12/12 REVISED DATE :2005/06/24C Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 G2N3904 Page: 2/2 .


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