G2N5551

www.DataSheet4U.com CORPORATION G2N5551 Description Features NP N E PITAX I AL PLANAR T RANSI STOR ISSUED DATE :2004/06/09 REVISED DATE :2004/11/29B The G2N5551 is designed for general purpose switching and amplifier applications. *Complementary to PNP Type G2N5401 *High Collector – Emitter Breakdown Voltage (VCEO > 160V (@IC=1mA) Package Dimensions D E S1 TO-92 A b1 S E A T IN G PLANE REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55 ~ +150 180 160 6 600 625 Max. 50 50 0.15 0.2 1 1 400 300 6 Unit V V V nA nA V V V V Test Conditions IC=100uA , IE=0 IC=1mA,IB=0 IE=10uA ,IC=0 VCB=120V, IE=0 VEB=4V, IC=0 IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHz, IE=0 * Pulse Test: Pulse Width 380us, Duty Cycle 2% Unit V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 fT Cob at Ta = 25 Min. 180 160 6 80 80 50 100 Typ. 160 - MHz pF Classification OF hFE2 Rank Range A 80-200 N 100-250 C 160-400 G2N5551 Page: ...